SW15N04V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode SOP-8/DFN5x6 MOSFET

SW15N04V
N-channel Enhanced mode SOP-8/DFN5x6 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 5.8mΩ)@V_GS=10V
(Typ 6.5mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 49nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: DC-DC Converter,
Motor Control, Power Supplies
SOP-8
D
D
D
D
G
S
S
S
DFN5x6
1. Gate 2. Drain 3. Source
BV_DSS : 40V
I_D
: 15A
R_DS(ON) : 5.8mΩ@ VGS=10V
6.5mΩ @ VGS=4.5V
2
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW K15N04V
2
SW HA15N04V
Marking
SW15N04V
SW15N04V
Package
SOP-8
DFN5x6
Packaging
REEL
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
SOP-8 DFN5x6
40
15*
9.5*
60
± 20
236
9
5
2.60
1.34
0.02
0.01
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thja Thermal resistance, Junction to ambient
Value
SOP-8 DFN5x6
48
93
Unit
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 2.0
1/6