SW150N06A Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220 MOSFET

SW150N06A
Features
 High ruggedness
 Low R_DS(ON) (Typ 3.9mΩ)@V_GS=10V
 Low Gate Charge (Typ 115nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
DC-DC converter, Inverter
N-channel Enhanced mode TO-220 MOSFET
TO-220
12
3
1. Gate 2. Drain 3. Source
BV_DSS : 60V
I_D
: 150A
R_DS(ON) :3.9mΩ
2
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW P 150N06A
Marking
SW150N06A
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
60
150*
94.5*
600
± 20
1125
145
5
251.8
2.0
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
0.5
52.6
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2017. Rev. 3.0
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