SW13N65K2 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

SW13N65K2
N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Features
TO-220F
TO-251
TO-252
 High ruggedness
 Low R_DS(ON) (Typ 0.24Ω)@V_GS=10V
 Low Gate Charge (Typ 28nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED, Charge, Adaptor
1
2
3
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 650V
I_D
: 13A
R_DS(ON) : 0.24Ω
2
1
3
Item
Sales Type
1
SW F 13N65K2
2
SW I 13N65K2
3
SW D 13N65K2
Marking
SW13N65K2
SW13N65K2
SW13N65K2
Package
TO-220F
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Value
TO-220F TO-251 TO-252
650
13*
8.2*
52
± 30
200
21
5
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
33.8
0.27
143.7 134.4
1.15 1.08
T_STG, T_J Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
300
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220F TO-251 TO-252
3.7
0.87 0.93
50
79
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0
1/7