SW13N50D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhancement mode TO-220F MOSFET

SW13N50D
N-channel Enhancement mode TO-220F MOSFET
Features
TO-220F
 High ruggedness
 R_DS(ON) (Typ 0.46Ω)@V_GS=10V
 Gate Charge (Typ 47nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED,Charger
123
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 500V
I_D
: 13A
R_DS(ON) : 0.46Ω
2
1
3
Item
Sales Type
1
SW F 13N50D
Marking
SW13N50D
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
(note 1)
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
500
13*
8.2*
52
±30
408
35
5
43
0.34
-55 ~ + 150
300
Value
2.9
0.5
55
Oct. 2015. Rev. 2.0
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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