SW12N65D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220SF/TO-220FT MOSFET

SW12N65D
N-channel Enhanced mode TO-220SF/TO-220FT MOSFET
Features
TO-220SF TO-220FT
 High ruggedness
 Low R_DS(ON) (Typ 0.66Ω)@V_GS=10V
 Low Gate Charge (Typ 41nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED , Charge, PC Power
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 650V
I_D
: 12A
R_DS(ON) : 0.66Ω
2
1
3
Item
Sales Type
Marking
Package
Packaging
1
SW MN12N65D
SW12N65D
TO-220SF
TUBE
2
SW Y12N65D
SW12N65D
TO-220FT
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220SF/TO-220FT
650
12*
7.6*
48
± 30
398
35
5
34
0.27
-55 ~ + 150
Value
TO-220SF/TO-220FT
3.7
48
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/6