SW12N60D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F MOSFET

SW12N60D
N-channel Enhanced mode TO-220F MOSFET
Features
TO-220F
 High ruggedness
 Low R_DS(ON) (Typ 0.7Ω)@V_GS=10V
 Low Gate Charge (Typ 48nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: UPS，Inverter，PC-POWER
1
23
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 600V
I_D
: 12A
R_DS(ON) : 0.7Ω
2
1
3
Order Codes
Item
Sales Type
Marking
1
SW F 12N60D
SW12N60D
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
Package
TO-220F
Value
600
12*
7.6*
48
±30
605
60
5
32.3
0.26
-55 ~ + 150
300
Packaging
TUBE
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
3.87
47.5
Oct. 2015. Rev. 2.0
Unit
o_C/W
o_C/W
1/6