SW11N65D Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET

SW11N65D
N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET
Features
TO-220
TO-220F
TO-262
 High ruggedness
 Low R_DS(ON) (Typ 0.75Ω)@V_GS=10V
 Low Gate Charge (Typ 43nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED , Adaptor
1
2
3
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 650V
I_D
: 11A
R_DS(ON) : 0.75Ω
2
1
3
Item
Sales Type
1
SW P 11N65D
2
SW F 11N65D
3
SW U 11N65D
Marking
SW11N65D
SW11N65D
SW11N65D
Package
TO-220
TO-220F
TO-262
Packaging
TUBE
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
TO-220
Value
TO-220F
650
TO-262
11*
7*
44
± 30
360
64
5
272
38
266
2.2
0.3
2.1
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
300
o_C
Value
TO-220 TO-220F TO-262
0.46
3.29
0.47
54
48
66
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 2.0 1/7