SW110R03VT Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252/DFN3*3 MOSFET

SW110R03VT
N-channel Enhanced mode TO-252/DFN3*3 MOSFET
Features
TO-252
DFN3*3
 High ruggedness
 Low R_DS(ON) (Typ 14mΩ)@V_GS=4.5V
 Low R_DS(ON) (Typ 10mΩ)@V_GS=10V
 Low Gate Charge (Typ 21nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC Converter,Motor
1
2
3
G(4) D(5,6,7,8)
S(1,2,3)
Control,Synchronous Rectification
TO-252 :1. Gate 2. Drain 3. Source
General Description
DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 30V
I_D
: 55A
R_DS(ON) : 14mΩ@V_GS=4.5V
10mΩ@V_GS=10V
D
G
S
Order Codes
Item
Sales Type
1
SW D 110R03VT
2
SW H 110R03VT
Marking
SW110R03VT
SW110R03V
Package
TO-252
DFN3*3
Packaging
REEL
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Value
TO-252 DFN3*3
30
55*
35*
220
± 20
56
6
5
Unit
V
A
A
A
V
mJ
mJ
V/ns
Total power dissipation (@T_C=25^oC)
P_D
Total power dissipation (@T_a=25^oC)
Derating factor above 25^oC
48
2.6
0.4
0.02
W
W
W/^oC
T_STG, T_J Operating junction temperature & storage temperature
-55 ~ + 150
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-252 DFN3*3
Unit
R_thjc Thermal resistance, Junction to case
2.6
o_C/W
R_thja Thermal resistance, Junction to ambient
49
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design.
DFN3*3 R_thja : 49^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2017. Rev. 3.0
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