SW10N80K2 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

SW10N80K2
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Features
TO-220F
TO-251N
TO-252
 High ruggedness
 Low R_DS(ON) (Typ 0.58Ω)@V_GS=10V
 Low Gate Charge (Typ 27nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED,Charge,PC Power
1
2
3
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 800V
I_D
: 10A
R_DS(ON) : 0.58Ω
2
1
3
Order Codes
Item
Sales Type
1
SW F 10N80K2
2
SW N 10N80K2
3
SW D 10N80K2
Marking
SW10N80K2
SW10N80K2
SW10N80K2
Package
TO-220F
TO-251N
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-220F TO-251N
800
10*
6*
40
± 30
234
3
5
39
178
0.3
1.4
-55 ~ + 150
300
TO-252
250
2
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
Unit
TO-220F TO-251N TO-252
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
3.2
0.7
0.5
o_C/W
47
80
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0
1/7