SW10N70K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-252 MOSFET

SW10N70K
N-channel Enhanced mode TO-220F/TO-252 MOSFET
Features
TO-220F TO-252
 High ruggedness
 Low R_DS(ON) (Typ 0.36Ω)@V_GS=10V
 Low Gate Charge (Typ 29nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Charge,LED,TV-Power
12 ₃
12 ₃
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 700V
I_D
: 10A
R_DS(ON) : 0.36Ω
2
1
3
Item
Sales Type
1
SW F 10N70K
2
SW D 10N70K
Marking
SW10N70K
SW10N70K
Package
TO-220F
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
TO-220F TO-252
700
10*
6.3*
40
± 30
120
15
5
25.5
240.4
0.2
1.9
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220F TO-252
4.9
0.5
48.7
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 4.0
1/6