SW10N65K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220F/TO251N /TO-220 MOSFET

SAMWIN
SW10N65K
N-channel TO-220F/TO251N /TO-220 MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 0.4Ω)@V_GS=10V
■ Gate Charge (Typical 29nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220F
TO-251N TO-220
1
2
3
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
Order Codes
BV_DSS : 650V
I_D
: 10A
R_DS(ON) : 0.4Ω
2
1
3
Item
Sales Type
1
SW F 10N65
2
SW I 10N65
3
SW P 10N65
Marking
SW10N65K
SW10N65K
SW10N65K
Package
TO-220F
TO251N
TO-220
Packaging
TUBE
TUBE
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
TO220F
Value
TO251N
650
10*
6.3*
40
± 30
270
60
5
25.5
96.2
0.2
0.77
-55 ~ + 150
300
TO-220
178.6
1.43
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
TO220F
4.9
48.7
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
TO251N
1.3
TO-220
0.70
80.0
53.7
Oct. 2014. Rev.3.0
Unit
o_C/W
o_C/W
o_C/W
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