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SW10N65D Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-220SF/TO-220/TO-262 MOSFET
SW10N65D
N-channel Enhanced mode TO-220F/TO-220SF/TO-220/TO-262 MOSFET
Features
TO-220F TO-220SF TO-220 TO-262
 High ruggedness
 Low RDS(ON) (Typ 0.9Ω)@VGS=10V
 Low Gate Charge (Typ 35nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: UPS,Inverter,PC-POWER
12
3
12
3
12
3
12
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BVDSS : 650V
ID
: 10A
RDS(ON) : 0.9Ω
2
1
3
Order Codes
Item
Sales Type
1
SW F 10N65D
2
SW MN 10N65D
3
SW P 10N65D
4
SW U 10N65D
Absolute maximum ratings
Marking
SW10N65D
SW10N65D
SW10N65D
SW10N65D
Package
TO-220F
TO-220SF
TO-220
TO-262
Packaging
TUBE
TUBE
TUBE
TUBE
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
TO-220F/
TO-220SF
Value
TO-220
650
TO-262
10*
6.3*
40
± 30
427
43
5
41.8
181.2
88.7
0.33
1.45
0.7
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
TO-220F/
TO-220SF
2.99
47
Value
TO-220
0.69
55
TO-262
1.41
82
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev.5.0
Unit
oC/W
oC/W
1/7