SW10N65 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET

SAMWIN
SW10N65
N-channel MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 1.1Ω)@V_GS=10V
■ Gate Charge (Typ 47nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220F
TO-220
1
2
3
1
2
3
BV_DSS : 650V
I_D
: 10.0A
R_DS(ON) : 1.1ohm
2
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
3
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
Order Codes
Item
1
2
Sales Type
SW P 10N65
SW F 10N65
Marking
SW10N65
SW10N65
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Value
TO-220
TO-220F
650
10.0
10.0*
5.7
5.7*
36
± 30
700
15.6
4.5
156
50*
1.25
0.4
-55 ~ + 150
300
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-220F
0.8
2.5
0.5
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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