SW09R08V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode DFN5× 6MOSFET

SW09R08V
N-channel Enhanced mode DFN5× 6MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 9mΩ)@V_GS=10V
(Typ 10.2mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 77nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Telecom, Computer, Inverter
DFN5× 6
1. Gate 2. Drain 3. Source
BV_DSS : 80V
I_D
: 80A
R_DS(ON) : 9mΩ@VGS=10V
10.2mΩ@VGS=4.5V
2
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW HA 09R08V
Absolute maximum ratings
Marking
SW09R08V
Package
DFN5× 6
Packaging
REEL
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
80
80*
50*
320
± 20
223
13.5
5
1.37
0.01
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
91
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 2.0
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