SW072R06ET Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-263/TO-220 MOSFET

SW072R06ET
N-channel Enhanced mode TO-263/TO-220 MOSFET
Features
TO-263
TO-220
 High ruggedness
 Low R_DS(ON) (Typ 6.8mΩ)@V_GS=10V
 Low Gate Charge (Typ 84nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
BV_DSS : 60V
I_D
: 75A
R_DS(ON) : 6.8mΩ
2
1
3
Order Codes
Item
Sales Type
1
SW B 072R06ET
2
SW P 072R06ET
Absolute maximum ratings
Marking
SW072R06ET
SW072R06ET
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Package
TO-263
TO-220
Packaging
TUBE
TUBE
Value
TO-263
TO-220
60
75*
47*
300
± 20
284
27
5
97
104
0.77
0.83
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-263
TO-220
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
1.29
1.20
54
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0
Unit
o_C/W
o_C/W
1/6