SW069R10VS Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET

SW069R10VS
N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET
Features
DFN5*6 TO-251 TO-252 TO-220
 High ruggedness
 Low R_DS(ON) (Typ 7.1mΩ)@V_GS=10V
 Low Gate Charge (Typ 45nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Li Battery Protect Board,
Synchronous Rectification, Inverter
General Description
G(4) D(5,6,7,8)
S(1,2,3)
12
3
12
3
1
23
TO-251/TO-252/TO-220: 1.Gate 2.Drain 3.Source
DFN5*6: 4.Gate 5,6,7,8.Drain 1,2,3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 100V
I_D
: 70A
R_DS(ON) : 7.1mΩ@V_GS=10V
9.0mΩ@V_GS=4.5V
D
G
S
Order Codes
Item
Sales Type
1
SW HA 069R10VS
2
SW I 069R10VS
3
SW D 069R10VS
4
SW P 069R10VS
Marking
SW069R10VS
SW069R10VS
SW069R10VS
SW069R10VS
Package
DFN5*6
TO-251
TO-252
TO-220
Packaging
REEL
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Total power dissipation (@T_a=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
DFN5*6 TO-251 TO-252 TO-220
100
70*
44*
280
± 20
277
18
5
158.2 158.2 195.3
2.7
0.02 1.3
1.3
1.6
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
DFN5*6 TO-251 TO-252 TO-220 ^Unit
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
47(Note)
0.79
74
0.79
0.64
50
o_C/W
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design.
DFN5*6 R_thja : 47^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 2.0
1/7