SW069R06VT Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/DFN5*6 MOSFET

SW069R06VT
N-channel Enhanced mode TO-251/DFN5*6 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 7.0mΩ)@V_GS=4.5V
(Typ 6.0mΩ)@V_GS=10V
 Low Gate Charge (Typ 83nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Electronic Ballast, Motor Control
Inverter
TO-251
DFN5*6
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
BV_DSS : 60V
I_D
: 60A
R_DS(ON) :7.0mΩ@V_GS=4.5V
6.0mΩ@V_GS=10V
2
1
3
Order Codes
Item
Sales Type
1
SW I 069R06VT
2
SW HA 069R06VT
Marking
SW069R06VT
SW069R06VT
Package
TO-251
DFN5*6
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-251 DFN5*6
60
60*
38*
240
± 20
324
18
5
208
1.6
1.7
0.01
-55 ~ + 150
300
Value
TO-251 DFN5*6
0.6
77
77
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/6