SW055R03VT Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252/TO-251/DFN3*3 MOSFET

SW055R03VT
N-channel Enhanced mode TO-252/TO-251/DFN3*3 MOSFET
Features
TO-252 TO-251 DFN3*3
 High ruggedness
 Low R_DS(ON) (Typ 6.2mΩ)@V_GS=4.5V
(Typ 4.4mΩ)@V_GS=10V
 Low Gate Charge (Typ 25nC)
 Improved dv/dt Capability
 100% Avalanche Tested
12
12
 Application:DC-DC Converter,Motor Control，
3
3
G(4) D(5,6,7,8)
S(1,2,3)
Synchronous Rectification
TO-252/TO-251:1. Gate 2. Drain 3. Source
General Description
DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 30V
I_D
: 80A
R_DS(ON) : 6.2mΩ@V_GS=4.5V
4.4mΩ@V_GS=10V
D
G
S
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW D 055R03VT
SW055R03VT
TO-252
REEL
2
SW I 055R03VT
SW055R03VT
TO-251
TUBE
3
SW H 055R03VT
SW055R03V
DFN3*3
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Total power dissipation (@Ta=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-252 TO-251 DFN3*3
30
80*
50*
320
± 20
83
8
5
74
83
2.9
0.6 0.7 0.02
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-252 TO-251 DFN3*3
1.7 1.5
73
43
Unit
o_C/W
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user‘s
board design. DFN3*3 R _thja : 43^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 4.0
1/7