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| SW051R85VS Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode SOP-8 MOSFET | |||
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SW051R85VS
N-channel Enhanced mode SOP-8 MOSFET
Features
ï¬ High ruggedness
ï¬ Low RDS(ON) (Typ 6.3mâ¦)@VGS=4.5V
Low RDS(ON) (Typ 4.7mâ¦)@VGS=10V
ï¬ Low Gate Charge (Typ 81nC)
ï¬ Improved dv/dt Capability
ï¬ 100% Avalanche Tested
ï¬ Application: Synchronous Rectification,
Li Battery Protect Board, Inverter
SOP-8
D
D
D
D
G
S
S
S
BVDSS : 85V
ID
: 80A
RDS(ON) : 6.3mâ¦@VGS=4.5V
4.7mâ¦@VGS=10V
D(5,6,7,8ï¼
General Description
G(4)
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
S(1,2,3)
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW K 051R85VS
SW051R85VS
SOP-8
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
Gate to source voltage
(note 1)
EAS
Single pulsed avalanche energy
(note 2)
EAR
Repetitive avalanche energy
(note 1)
dv/dt Peak diode recovery dv/dt
(note 3)
Total power dissipation (@Ta=25oC)
PD
Derating factor above 25oC
TSTG, TJ Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
85
80*
50*
320
± 20
371
14
5
2.98
0.02
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
Symbol
Parameter
Value
Unit
Rthja Thermal resistance, Junction to ambient
42
oC/W
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's
board design.
SOP-8 Rthja : 42oC/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2017. Rev. 2.0 1/6
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