SW051R08ES Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-263/TO-220/TO-220F MOSFET

SW051R08ES
N-channel Enhanced mode TO-263/TO-220/TO-220F MOSFET
Features
TO-263
TO-220
 High ruggedness
 Low R_DS(ON) (Typ 5.1mΩ)@V_GS=10V
 Low Gate Charge (Typ 44nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 80V
I_D
: 120A
R_DS(ON) : 5.1mΩ
2
1
3
Order Codes
Item
Sales Type
1
SW B 051R08ES
2
SW P 051R08ES
Marking
SW051R08ES
SW051R08ES
Package
TO-263
TO-220
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
TO-263
TO-220
80
120*
85*
480
± 20
490
25
5
192.3
215.5
1.53
1.72
-55 ~ + 150
300
Value
TO-263
TO-220
0.65
0.58
50
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2017. Rev. 5.0
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
1/7