SW051R08ES-1 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/TO-252 MOSFET

SW051R08ES
N-channel Enhanced mode TO-251/TO-252 MOSFET
Features
TO-251
TO-252
 High ruggedness
 Low R_DS(ON) (Typ 5.1mΩ)@V_GS=10V
 Low Gate Charge (Typ 44nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 80V
I_D
: 90A
R_DS(ON) : 5.1mΩ
2
1
3
Order Codes
Item
Sales Type
1
SW I 051R08ES
2
SW D 051R08ES
Marking
SW051R08ES
SW051R08ES
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J
T_L
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
TO-251
127.6
1.02
Value
80
90*
57*
360
± 20
490
25
5
TO-252
126.3
1.01
-55 ~ + 150
300
TO-251
0.98
75
Value
TO-252
0.99
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
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