SW045R02VT Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode DFN3*3 MOSFET

SW045R02VT
Features
N-channel Enhanced mode DFN3*3 MOSFET
 High ruggedness
 Low R_DS(ON) (Typ 4.6mΩ)@V_GS=2.5V
Low R_DS(ON) (Typ 3.7mΩ)@V_GS=4.5V
Low R_DS(ON) (Typ 3.3mΩ)@V_GS=10V
 Low Gate Charge (Typ 49nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: DC-DC Converter,Motor Control
Synchronous Rectification
DFN3*3
G(4) D(5,6,7,8)
S(1,2,3)
Gate:4 Drain:5,6,7,8 Source:1,2,3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 20V
I_D
: 80A
R_DS(ON) : 4.6mΩ@V_GS=2.5V
3.7mΩ@V_GS=4.5V
3.3mΩ@V_GS=10V
D
G
S
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW H 045R02VT
SW045R02V
DFN3*3
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
(note 1)
E_AS
Single pulsed avalanche energy
(note 2)
E_AR
Repetitive avalanche energy
(note 1)
dv/dt Peak diode recovery dv/dt
(note 3)
Total power dissipation (@Ta=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
20
80*
50*
320
± 12
122
9
5
2.6
0.02
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
Symbol
Parameter
Value
Unit
R_thja Thermal resistance, Junction to ambient
48
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design.
DFN3*3 R_thja : 48^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 2.0 1/6