SW038R10ES Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET

SW038R10ES
N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET
Features
TO-263 TO-220 TO-247
 High ruggedness
 Low R_DS(ON) (Typ 3.6mΩ)@V_GS=10V
 Low Gate Charge (Typ 132nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
Inverter , Li Battery Protect Board
12
3
12 ₃
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 100V
I_D
: 120A
R_DS(ON) : 3.6mΩ
2
1
3
Order Codes
Item
Sales Type
1
SW B 038R10ES
2
SW P 038R10ES
3
SW T 038R10ES
Absolute maximum ratings
Marking
SW038R10ES
SW038R10ES
SW038R10ES
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
(note 1)
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Package
TO-263
TO-220
TO-247
Packaging
TUBE
TUBE
TUBE
TO-263
Value
TO-220
100
TO-247
120*
100*
480
± 20
1126
106
5
205
216
260
1.6
1.7
2.1
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
300
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
TO-263
0.61
Value
TO-220
0.58
53
TO-247
0.48
35
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2017. Rev. 7.0
1/7