SW029R06ET Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220/TO-263 MOSFET

SW029R06ET
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 2.6mΩ)@V_GS=10V
 Low Gate Charge (Typ 168nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Electronic Ballast , Motor
Control , Synchronous Rectification, Inverter
TO-220
TO-263
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
BV_DSS : 60V
I_D
: 120A
R_DS(ON) : 2.6mΩ
2
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW P 029R06ET
2
SW B 029R06ET
Absolute maximum ratings
Marking
SW029R06ET
SW029R06ET
Package
TO-220
TO-263
Packaging
TUBE
TUBE
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-220 TO-263
60
120*
76
480
± 20
2059
113
5
312.5
250
2.5
2
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220 TO-263
0.4
0.5
52
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 2.0 1/6