SW026R03VT Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode DFN5*6 MOSFET

SW026R03VT
Features
N-channel Enhanced mode DFN5*6 MOSFET
 High ruggedness
 Low R_DS(ON) (Typ 3.5mΩ)@V_GS=4.5V
(Typ 3.0mΩ)@V_GS=10V
 Low Gate Charge (Typ 113nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC Converter, Inverter,
Synchronous Rectification
DFN5*6
BV_DSS : 30V
I_D
: 80A
R_DS(ON) : 3.5mΩ@V_GS=4.5V
3.0mΩ@V_GS=10V
D(5,6,7,8)
G(4)
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
S(1,2,3)
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW HA 026R03VT
SW026R03VT
DFN5*6
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Value
30
80*
50*
320
± 20
398
18
5
1.4
0.01
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thja Thermal resistance, Junction to ambient
Value
88
Unit
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design. 88^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/6