SS32F Datasheet, PDF (1/3 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 3.0A
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg / 0.00095oz
SS32F THRU SS320F
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: SS32 — SS320
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols SS32F SS34F SS34AF SS36F SS38F SS310F SS312F SS315F SS320F Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40 45 60
80 100 120 150 200
V
Maximum RMS voltage
VRMS
14
28 31.5 42
56
70
84 105 140
V
Maximum DC Blocking Voltage
VDC
20
40 45 60
80 100 120 150 200
V
Maximum Average Forward Rectified Current
I F ( AV )
3.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
IFSM
80
on Rated Load (JEDEC method)
70
A
Max Instantaneous Forward Voltage at 3 A
VF
0.55
0.70
0.85
0.95
V
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage T_a =100°C
Typical Junction Capacitance^{（1）}
（2）
Typical Thermal Resistance
Operating Junction Temperature Range
IR
Cj
RθJA
Tj
0.5
0.3
5
3
250
180
70
-55 ~ +150
mA
pF
°C/W
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
Page 1 of 3