SS12F Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 1.0 A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg / 0.00095oz
SS12F THRU SS120F
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: SS12 — SS120
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols SS12F SS14F SS16F SS18F SS110F SS112F SS115F SS120F Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80 100 120 150 200 V
Maximum RMS voltage
VRMS
14
28
42
56
70
84 105 140 V
Maximum DC Blocking Voltage
VDC
20
40
60
80 100 120 150 200 V
Maximum Average Forward Rectified Current
I F ( AV )
1.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
IFSM
40
on Rated Load (JEDEC method)
30
A
Max Instantaneous Forward Voltage at 1 A
VF
0.55
0.70
0.85
0.90
V
Maximum DC Reverse Current Ta = 25°C
0.3
at Rated DC Reverse Voltage _{Ta =100°C}
IR
10
0.2
0.1
mA
5
2
Typical Junction Capacitance^{（1）}
Typical Thermal Resistance^{（2）}
Operating Junction Temperature Range
Cj
RθJA
Tj
110
80
95
-55 ~ +150
pF
°C/W
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
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