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S12AW Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Surface MountGeneral Purpose Silicon Rectifiers
S12AW THRU S12MW
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1.2 A
FEATURES
▪For surface mounted applications
▪Low profile package
▪Glass Passivated Chip Junction
▪Ideal for automated placement
▪Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
▪Case: SOD-123FL
▪Terminals: Solderable per MIL-STD-750, Method 2026
▪Approx. Weight:15mg 0.00053oz
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
Simplified outline SOD-123FL and symbol
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Symbols S12AW S12BW S12DW S12GW S12JW S12KW S12MW Units
Maximum Repetitive Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage
VRMS
35
70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
I F ( AV )
1.2
A
at Tc = 125 °C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
40
A
Maximum Instantaneous Forward Voltage at 1.2 A
VF
1.0
V
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta =125 °C
Typical Junction Capacitance (1)
Typical Thermal Resistance (2)
Operating and Storage Temperature Range
IR
Cj
RθJA
RθJC
Tj, Tstg
5
50
18
80
25
-55 ~ +150
μA
pF
°C/W
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
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