1N5817W Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER RECTIFIERS
FEATURES
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
1N5817W THRU 1N5819W
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: 1N5817W---12A
1N5818W---13A
1N5819W---14A
Simplified outline SOD-123FL and symbol
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Symbols 1N5817W 1N5818W 1N5819W Units
VRRM
20
30
40
V
VRMS
14
21
28
V
VDC
20
30
40
V
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
at 1 A
at 3 A
Maximum Instantaneous Reverse Current at TA = 25°C
Rated DC Reverse Voltage
TA = 100°C
Typical Junction Capacitance
Storage and Operating Junction Temperature Range
I F ( AV )
1
A
IFSM
25
A
0.45
0.55
0.6
VF
V
0.75
0.875
0.9
1
IR
mA
10
Cj
110
pF
Tj, Tstg
-55 ~ +150
°C
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
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