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SKM200GB176DH10 Datasheet, PDF (3/4 Pages) Semikron International – Trench IGBT Modules
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SKM 200GB176D H10
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
3
Fig. 12 Typ. CAL diode peak reverse recovery current
15-12-2005 SCT
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