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SKM75GB176D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules | |||
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SKM 75GB176D
SEMITRANS® 2
Trench IGBT Modules
SKM 75GB176D
Preliminary Data
Features
!"
# $ %
Typical Applications
&
'
()( *
)(+ &
,!
$ -
Characteristics
Symbol Conditions
Inverse Diode
<
%<
(+ &8 6 +
0 .( / -
0 2.( / -
<+
0 .( /
0 2.( /
<
0 .( /
0 2.( /
%445
C
%<
(+ &
'E' 2?.+ &E;
0 2.( /
6 *2( 8 2.++
40*J
Module
''
K
4L>L
-"
*
.( /
2.( /
4*
5
'
M 5#
5
5(
min.
?
."(
typ.
2")
2"3
2"2
+"@
2.
23
(.
.+
2="(
+")(
2
max. Units
2"@
.
2"?
2"2
2.
A
23
A
&
;
F
+"(( HEI
?+
A
A
+"+( HEI
(
N
(
N
2#+
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
14-11-2006 RAA
© by SEMIKRON
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