SKM75GB128D_06 Datasheet, PDF (2/6 Pages) Semikron International – SPT IGBT Module

SKM 75GB128D
SEMITRANS^® 2
SPT IGBT Module
SKM 75GB128D
Characteristics
Symbol Conditions
Inverse Diode
_>  _
'_{> !}  /, (: _8  , 
₁  +/ 0_{ ?}
₁  3+/ 0_{ ?}
_>,
₁  +/ 0
_>
'₆₆₇
E_
_
'_{> !}  /, (
)J)  +3,, (J=
₁  +/ 0
₁  3+/ 0
_8  3/ : _  %,, 
6_1L
Module
 ) )
M_
6_NAN
?$ !
_ +/ 0
_ 3+/ 0
6_
 ! ) 
7_
  - 7%
7
 ! 7/

min.
B
+$/
typ.
+
3$4
3$3
34
//
5$B
+$%
,$5/
3
max. Units
+$/


3$+

+%
!D
(
=
!G
,$%
IJK
B,
"
!D
!D
,$,/ IJK
/
O!
/
O!
3%,

Features
 ^{     }
  
 ^ ^{    ! }
  
 ^{"     #$ }
!  % & '_
Typical Applications
 ^{(   ) }
 ^*
 ^{  ) }  ^+,
-".
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
11-09-2006 SEN
© by SEMIKRON