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SKM600GB126D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Module
SKM 600GB126D ...
SEMITRANS® 3
Trench IGBT Module
SKM 600GB126D
SKM 600GAL126D
Preliminary Data
Features
      
      
 
        
  ! "
Typical Applications
 #  $
 %&'
   $
Remarks
 "( ) *++#    ,++ -
Characteristics
Symbol Conditions
Inverse diode
: 
": 2++ #7 5 + 
/ .* - =
/ ,.* - =
:+
/ .* -
/ ,.* -
:
/ .* -
/ ,.* -
"334
E

": 2++ #
$J$ C ++ #J9
/ ,.* -
5 @,* 7  ++ 
3 >/@ ?(
 $$
Freewheeling Diode
: 
": 2++ #7 5 + 
/ .* - =
/ ,.* - =
:+
/ .* -
/ ,.* -
:
/ .* -
/ ,.* -
"334
E

": 2++ #
$J$ C ++ #J9
/ ,.* -
5 @,* 7  ++ 
3 >/@ ?:(
Module
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L
3MAM
=  @ 
  .* -
  ,.* -
3 > @?
4
 $
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4
   4

min.
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.*
typ.
,
,
,
+1
,*
.
2C*
;
2,
,
,
,
+1
,*
.
2C*
;
2,
,*
+<*
+*
max. Units
,1

,1

,,

+;

,1
B
.<
B
#
9
G
+,.* IJK
,1

,1

,,

+;

,1

.<

#
9
G
+,.* IJK
.+

B
B
++<1 IJK
*
O
*
O
<.*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
11-09-2006 SEN
© by SEMIKRON