SKM600GA12E4_13 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM600GA12E4
SEMITRANS^® 4
IGBT4 Modules
SKM600GA12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Switched reluctance motor
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
• Short circuit: Soft Turn-off
recommended RGoff > 20 Ω
• With RG = 2 Ω the RBSOA is limited to
1 x ICnom = 600 A
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 600 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 600 A
T_j = 150 °C
di/dt_off = 5500 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
M6
to terminals
M4
w
min.
typ.
max. Unit
2.14
2.46
V
2.07
2.38
V
1.3
1.5
V
0.9
1.1
V
1.4
1.6
m
1.9
2.1
m
420
A
92
µC
38
mJ
0.086 K/W
15
20
nH
0.18
m
0.22
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
1.1
2
Nm
330
g
GA
2
Rev. 4 – 21.08.2013
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