SKM600GA126D Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SKM 600GA126D
SEMITRANS^® 4
Trench IGBT Modules
SKM 600GA126D
Preliminary Data
Features
 ^{      }
 ^  ^{   }
 
 ^{      ! }
  " # $_
Typical Applications
 ^{%  &}
 ^'()
 ^{  &}
Characteristics
Symbol Conditions
Inverse diode
_;  _
$_;  200 %7 _5  0 
_-  *+ , _>
_-  /*+ , _>
_;0
_-  *+ ,
_-  /*+ ,
_;
_-  *+ ,
_-  /*+ ,
$₃₃₄
D_
_
$_;  200 %
&I&  +100 %I:
_-  /*+ ,
_5  ?/+ 7 _  "00 
min.
3_{ -? K}
Module
 &&
L_
3_M@M
>!  ? 
 _ *+ ,
 _ /*+ ,
3_{  ?}
 &
4_
   N 4"
=
4_
   4" 42
*!+ /!/

typ.
/!"
/!"
/
0!1
/!+
*
=+0
1B
/+
0!/1
0!**
max. Units
/!1

/!1

/!/

0!<

/!1
A
*!=
A
%
:
F
0!/*+ HIJ
*0

A
A
0!0=1 HIJ
+
O
+ *
O
==0

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GA
2
11-09-2006 RAA
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