SKM50GB12T4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM 50GB12T4
SEMITRANS^® 2
IGBT4 Modules
Characteristics
Symbol Conditions
Inverse Diode
_D _
_{D } 63 -@ _ 3 
_D3
_D
₌₌₊
I_
_
_{D } 63 -
=_8E
 //
Freewheeling Diode
min.
₈ 26 7_$
₈ :63 7_$
₈ 26 7
₈ :63 7
₈ 26 7
₈ :63 7
₈ :63 7
typ.
2&26
2&2
:&>
3&G
:G
2'
>&<
max. Units
2&66

2&6

:&6

:&:

2:
H
2<
H
-
C
L
3&<
MJN
_D _
_{D } -@ _ 
₈ 7_$

SKM 50GB12T4
_D3
₈ 7

_D
₈ 7

₌₌₊
_{D } -
₈ 7
-
Target Data
I_
C
_
L
 //
MJN
Features
Module
 ^{     }

 ^ ^{  }
  
 ^{!"   #$%& $}
$ "  ' ( _)*+
 ^{,   "    -.}
// -. 
Typical Applications
._
=_OFO
=_E
+_
+_

&  $E
 /$
   4 +'
  $ +6
_ 26 7
_ :26 7
>
2&6
23
>3
!
3&;6 H
:
H
3&36 MJN
6
)
6
)
:'3
"
 ^{-   /}
 ^01,
 ^{$  $/ }  ^{ 23}
4!5
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
09-07-2007 SCH
© by SEMIKRON