SKM50GB063D_06 Datasheet, PDF (2/6 Pages) Semikron International – Superfast NPT-IGBT Modules

SKM 50GB063D
SEMITRANS^® 2
Superfast NPT-IGBT
Modules
SKM 50GB063D
Characteristics
Symbol Conditions
Inverse Diode
%_>  %_&# _>  /3 -: %_&  3 %
₁  ./ 0# _+$
₁  4./ 0# _+$
%_>3
₁  4./ 0#
_>
₆₆₇
F_
&_
_>  /3 -
','  /3 -,=
₁  4./ 0#
₁  4./ 0#
%_&  4/ %: %_##  933 %
6_{A1 BL}
Module
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M_#&
6_##NC&&N
$    
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 _ 4./ 0#
6_{A B}
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7_
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7_
    7/
)
min.
9
./
typ.
4@/
49/
43
94
9.
35/
4
max. Units
45
%
%
3K
%
4/
D
-
=#
H
4
I,J
93

D
D
33/ I,J
/

/

4!3

Features
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Typical Applications
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
05-09-2006 SEN
© by SEMIKRON