SKM400GB126D_06 Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Module

SKM 400GB126D ...
SEMITRANS^® 3
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{     }
   ! " #_
Typical Applications
 ^{$     %} 
 ^&'
 ^{    % }
Characteristics
Symbol Conditions
Inverse Diode
_;  _
#_{; }  2.. $7 _5  . 
₊  () *_{ <}
₊  -() *_{ <}
_;.
₊  () *
₊  -() *
_;
₊  () *
₊  -() *
#₃₃₄
D_
_
#_{; }  2.. $
%I%  !2.. $I:
₊  -() *
_5  ?-) 7 _  !.. 
3_=+?>K
  %%
Freewheeling Diode
_;  _
#_{; }  2.. $7 _5  . 
₊  () *_{ <}
₊  -() *_{ <}
_;.
₊  () *
₊  -() *
_;
₊  () *
₊  -() *
#₃₃₄
D_
_
#_{; }  2.. $
%I%  !2.. $I:
₊  -() *
_5  ?-) 7 _  !.. 
3_=+?>K
Module
  %%
L_
3_M@M
 <   ?
_  () *
_  -() *
3_=?>
4
  %
    N 4!
4_
    4!

min.
2
()
typ.
-!
-!
-
.1
(
(0
2A.
00
(0
-!
-!
-
.1
(
(0
2A.
00
(0
-)
. 2)
.)
max. Units
-1

-1

--

.A

(2
B
2
B
$
:
F
. -1 HIJ
-1

-1

--

.A

(2

2

$
:
F
. -1 HIJ
(.

B
B
. .21 HIJ
)
O
)
O
2()

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
11-09-2006 SEN
© by SEMIKRON