SKM400GAR17E4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 = 4. generation medium fast trench IGBT (Infineon)

SKM400GAR17E4
SEMITRANS^® 3
IGBT4 Modules
SKM400GAR17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
Conditions
V_CC = 1200 V
I_C = 400 A
V_GE = +15/-15 V
R_{G on} = 2 Ω
R_{G off} = 1 Ω
di/dt_on = 10000 A/
µs
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_off = 2300 A/µs
du/dt = 5600 V/µs
T_j = 150 °C
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
V_F0
chiplevel
r_F
chiplevel
I_RRM
Q_rr
E_rr
R_th(j-c)
I_F = 400 A
di/dt_off = 10100 A/
µs
V_GE = ±15 V
V_CC = 1200 V
per diode
Freewheeling diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
V_F0
chiplevel
r_F
chiplevel
I_RRM
Q_rr
E_rr
R_th(j-c)
Module
L_CE
R_CC'+EE'
I_F = 400 A
di/dt_off = 10100 A/
µs
V_GE = ±15 V
V_CC = 1200 V
per Diode
terminal-chip
R_th(c-s)
M_s
M_t
per module
to heat sink M6
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_C = 25 °C
T_C = 125 °C
to terminals M6
w
min.
typ.
280
45
156.5
760
140
max.
Unit
ns
ns
mJ
ns
ns
180
mJ
0.066 K/W
2.00
2.40
V
2.15
2.57
V
1.32
1.56
V
1.08
1.22
V
1.7
2.1
mΩ
2.7
3.4
mΩ
615
A
150
µC
130
mJ
0.13 K/W
2.00
2.15
1.32
1.08
1.7
2.7
615
150
130.3
2.40
V
2.57
V
1.56
V
1.22
V
2.1
mΩ
3.4
mΩ
A
µC
mJ
0.13 K/W
15
nH
0.55
mΩ
0.85
mΩ
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GAR
2
Rev. 2 – 19.03.2015
© by SEMIKRON