SKM400GAR12T4_13 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules

SKM400GAR12T4
SEMITRANS^® 3
Fast IGBT4 Modules
SKM400GAR12T4
Features
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
• Electronic welders at fsw up to 20 kHz
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
Conditions
V_CC = 600 V
T_j = 150 °C
I_C = 400 A
V_GE = ±15 V
R_{G on} = 1 
R_{G off} = 1 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 9700 A/µs T_j = 150 °C
di/dt_off = 4300 A/µs _{Tj = 150 °C}
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 8800 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 8800 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per Diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
to terminals M6
w
min.
typ.
max. Unit
220
ns
47
ns
33
mJ
505
ns
78
ns
42
mJ
0.072 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
2.3
2.5
m
3.1
3.4
m
450
A
68
µC
30.5
mJ
0.14 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
2.3
2.5
m
3.1
3.4
m
450
A
68
µC
30.5
mJ
0.14 K/W
15
20
nH
0.25
m
0.5
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GAR
2
Rev. 3 – 03.09.2013
© by SEMIKRON