SKM400GAL126D_15 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SKM400GAL126D
SEMITRANS^® 3
Trench IGBT Modules
SKM400GAL126D
Features
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x I_C
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
Conditions
V_CC = 600 V
I_C = 300 A
V_GE = +15/-15 V
R_{G on} = 2 Ω
R_{G off} = 2 Ω
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
E_off
T_j = 125 °C
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 125 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 125 °C
I_F = 300 A
T_j = 125 °C
di/dt_off = 6300 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 125 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 125 °C
I_F = 300 A
T_j = 125 °C
di/dt_off = 6300 A/µs
V_GE = ±15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per Diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
330
ns
50
ns
29
mJ
650
ns
110
ns
48
mJ
0.08 K/W
1.60
1.80
V
1.60
1.80
V
1
1.1
V
0.8
0.9
V
2.00
2.3
mΩ
2.7
3
mΩ
390
A
77
µC
27
mJ
0.18 K/W
1.60
1.80
V
1.60
1.80
V
1
1.1
V
0.8
0.9
V
2.00
2.3
mΩ
2.7
3
mΩ
390
A
77
µC
27
mJ
0.18 K/W
15
nH
0.35
mΩ
0.5
mΩ
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GAL
2
Rev. 1.0 – 20.07.2015
© by SEMIKRON