SKM300GB17E4H16 Datasheet, PDF (2/6 Pages) Semikron International – IGBT4 Modules

SKM300GB17E4H16
SEMITRANS^® 3
IGBT4 Modules
SKM300GB17E4H16
Features
• H16: IGBT-chip with improved
robustness against moisture
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequencies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• Medium voltage inverter market
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
R_th(c-s)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 300 A
T_j = 150 °C
di/dt_off = 7100 A/µs
V_GE = ±15 V
V_CC = 1200 V
T_j = 150 °C
T_j = 150 °C
per diode
per diode (λ_grease=0.81 W/(m*K))
Module
L_CE
R_CC'+EE'
R_th(c-s)1
R_th(c-s)2
M_s
M_t
measured per
T_C = 25 °C
switch
T_C = 125 °C
calculated without thermal coupling
(λ_grease=0.81 W/(m*K))
including thermal coupling,
Ts underneath module
(λ_grease=0.81 W/(m*K))
to heat sink M6
to terminals M6
w
min.
3
2.5
typ.
2.00
2.14
1.32
1.08
2.3
3.5
450
102
71
0.051
15
0.55
0.85
0.012
0.019
max. Unit
2.40
V
2.56
V
1.56
V
1.22
V
2.8
mΩ
4.5
mΩ
A
µC
mJ
0.19 K/W
K/W
nH
mΩ
mΩ
K/W
K/W
5
Nm
5
Nm
Nm
325
g
GB
2
Rev. 1.0 – 04.04.2017
© by SEMIKRON