SKM300GB12T4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM 300GB12T4
SEMITRANS^® 3
IGBT4 Modules
SKM 300GB12T4
Target Data
Features
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Typical Applications
Characteristics
Symbol Conditions
Inverse Diode
_C _
_{C } <55 -@ _ 5 
_C5
_C
₌₌₊
F_
_
_{C } <55 -
=_74
 //
Freewheeling Diode
_C _
_{C } -@ _ 
_C5
_C
₌₌₊
F_
_
_{C } -
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Module
._
=_L6L
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=_4
+_
+_

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  $ +'
min.
₇ 12 3_$
₇ 025 3_$
₇ 12 3
₇ 025 3
₇ 12 3
₇ 025 3
₇ 025 3
₇ 3_$
₇ 3
₇ 3
₇ 3
_ 12 3
_ 012 3
<
1&2
typ.
1&1
1&0
0&<
5&>
<
11&2
02
5&51
max. Units
1&2

1& 2

0&2

0&0

<&<< D
&2
D
-
B
I
5&0: JGK



-
B
I
JGK
15
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5&<2 D
5&2
D
5&5<; JGK
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2
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<12
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Remarks
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0123 (&  _ 4 5 
60253& / $ $ $/
 ₇80253
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
12-07-2007 SCH
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