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SKM300GB125D_09 Datasheet, PDF (2/6 Pages) Semikron International – Ultra Fast IGBT Module | |||
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SKM 300GB125D
SEMITRANS® 3
Ultra Fast IGBT Module
Characteristics
Symbol Conditions
Inverse Diode
8$ 5 84' $
5 .,, (B 84 5 , 8
8$,
$
22=
K
4
2*9
-)
Module
$ 5 .,, (
O 5 <,,, (OE
84 5 , 8B 8'' 5 A,, 8
9 5 .6 7'
&F
9 5 +.6 7'
&F
9 5 .6 7'
9 5 +.6 7'
9 5 .6 7'
9 5 +.6 7'
9 5 +.6 7'
min.
typ.
.
+"<
+"+
?"6
;?,
?A
max. Units
."6
8
8
+".
8
8
A"6
J
J
(
E'
M
,"+< NOP
SKM 300GB125D
Features
!" #
$ % #
& '(
)' )
'
!
*+, -
*., -
'4
2''QG44Q
F"
2*
-
=
=
0 =A
=A
5 .6 7'
5 +.6 7'
;
."6
+6
.,
,";6
J
,"6
J
,",;< NOP
6
6
;.6
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
# / ., 01
2
& +,, 01
&
3 3
# / ., 01
4
# / ., 01
GB
2
03-06-2009 NOS
© by SEMIKRON
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