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SKM300GB125D_09 Datasheet, PDF (2/6 Pages) Semikron International – Ultra Fast IGBT Module
SKM 300GB125D
SEMITRANS® 3
Ultra Fast IGBT Module
Characteristics
Symbol Conditions
Inverse Diode
8$ 5 84' $  5 .,, (B 84 5 , 8
8$,
$
22=
K
4
2*9 -)
Module
$ 5 .,, (
O 5 <,,, (OE
84 5 , 8B 8'' 5 A,, 8
  
9 5 .6 7'  &F
9 5 +.6 7'  &F
9 5 .6 7'
9 5 +.6 7'
9 5 .6 7'
9 5 +.6 7'
9 5 +.6 7'
min.
typ.
.
+"<
+"+
?"6
;?,
?A
max. Units
."6
8
8
+".
8
8
A"6
J
J
(
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M
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SKM 300GB125D
Features
      
       
        
      
        !" #
 
 $ %  #  & '(  
       
)' )  '    
   !
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    *., -
'4
2''QG44Q
F"   
2* -
=
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   =A
 5 .6 7'
 5 +.6 7'
;
."6
+6
.,

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J
,"6
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6

6

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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
        
# / ., 01
 2    &  +,, 01
   &  
 3 3     
   # / ., 01
 4     # / ., 01
GB
2
03-06-2009 NOS
© by SEMIKRON