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SKM300GB066D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules | |||
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SKM 300GB066D
SEMITRANS® 3
Trench IGBT Modules
SKM 300GB066D
Preliminary Data
Characteristics
Symbol Conditions
Inverse Diode
D
%D
900 &7 8 0
D0
D
%::A
G
%D
900 &
'J' >000 &J6
8 .@ 7 900
:3.N
Module
''
O
:P2P
1"
.
:.
A
A
'
< A#
A#
3 +, - 1
3 +, -
3 +, -
3 *,0 -
+, -
*+, -
min.
9
+",
typ.
*"/
0"?,
*",
9/0
/>
*0",
*,
0"9,
0",
max. Units
*"#
*
+
E
&
6
I
0"+, LJM
+0
E
E
0"09@ LJM
,
Q
,
Q
9+,
Features
!"
# $ %
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
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Remarks
'
*+,- $"
' '
./0 111 2*,0-
)' ! '
3 4*,0-
'5 4 #67 8 4
*,7 3 *,0-7 4 9#0"
:8
;
< . '
!
'
GB
2
05-09-2006 SEN
© by SEMIKRON
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