English
Language : 

SKM300GB066D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules
SKM 300GB066D
SEMITRANS® 3
Trench IGBT Modules
SKM 300GB066D
Preliminary Data
Characteristics
Symbol Conditions
Inverse Diode
D  
%D   900 &7 8  0 
D0
D
%::A
G

%D   900 &
'J'  >000 &J6
8  .@ 7   900 
:3.N
Module
  ''
O
:P2P
 1"   .
:. 
A
A

  ' 
    < A#
    A#
3  +, - 1
3  +, -
3  +, -
3  *,0 -
  +, -
  *+, -
min.
9
+",
typ.
*"/
0"?,
*",
9/0
/>
*0",
*,
0"9,
0",
max. Units
*"#

*

+
E
&
6
I
0"+, LJM
+0

E
E
0"09@ LJM
,
Q
,
Q
9+,

Features
   
        
         
  
     !" 
   # $ %
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
 &     '
 ()
     ' 
Remarks
       '   
*+,- $"   ' '  
./0 111 2*,0-
 )'   !    '
 3 4*,0-
    '5  4 #6 7 8 4
*,7 3  *,0-7  4 9#0"
   :8   ;
 <    .  '
!   '  
GB
2
05-09-2006 SEN
© by SEMIKRON