SKM300GAL12E4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM300GAL12E4
SEMITRANS^®3
IGBT4 Modules
SKM300GAL12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x I_CNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
• DC – Motor
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Characteristics
Symbol Conditions
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
V_CC = 600 V
T_j = 150 °C
I_C = 300 A
T_j = 150 °C
V_GE = ±15 V
R_{G on} = 1.5 Ω
R_{G off} = 1.5 Ω
T_j = 150 °C
T_j = 150 °C
di/dt_on = 6100 A/µs ^Tj ^{= 150 °C}
di/dt_off = 3000 A/µs _{Tj = 150 °C}
per IGBT
Inverse diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 300 A
T_j = 150 °C
di/dt_off = 7300 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 300 A
T_j = 150 °C
di/dt_off = 7300 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per Diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
220
ns
44
ns
27
mJ
520
ns
117
ns
39
mJ
0.11 K/W
2.17
2.49
V
2.11
2.42
V
1.3
1.5
V
0.9
1.1
V
2.9
3.3
mΩ
4.0
4.4
mΩ
345
A
54
µC
23
mJ
0.17 K/W
2.17
2.49
V
2.11
2.42
V
1.3
1.5
V
0.9
1.1
V
2.9
3.3
mΩ
4.0
4.4
mΩ
345
A
54
µC
23
mJ
0.17 K/W
15
20
nH
0.25
mΩ
0.5
mΩ
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GAL
2
Rev. 0 – 19.02.2009
© by SEMIKRON