SKM200GB176D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SKM 200GB176D...
SEMITRANS^® 3
Trench IGBT Modules
SKM 200GB176D
SKM 200GAL176D
Preliminary Data
Features
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Typical Applications
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Characteristics
Symbol Conditions
Inverse Diode
₌  _
#_{= }  2&) $9 _7  ) 
₀  .& /_{ ,}
₀  2.& /_{ ,}
₌₎
₀  .& /
₀  2.& /
₌
₀  .& /
₀  2.& /
#₄₄₅
C_
_
#_{= }  2&) $
%H%  6')) $H<
₀  2.& /
_7  (2& 9 _  2.)) 
4_+0(-J
FWD
₌  _
₌₎
₌
#₄₄₅
C_
_
  %%
#_{= }  2&) $9 _7  ) 
#_{= }  2&) $
%H%  6')) $H<
₀  .& /_{ ,}
₀  2.& /_{ ,}
₀  .& /
₀  2.& /
₀  .& /
₀  2.& /
₀  2.& /
_7  (2& 9 _  2.)) 
4_+0(-=J
Module
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K_
4_L?L
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5_
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min.
6
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typ.
2'
2'
22
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>
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2@&
&.
62
2'
2'
22
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>
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2@&
&.
62
2&
) 6&
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max. Units
2@

2@

26

22

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A
&6
A
$
<
E
) .& GHI
2@

2@

26

22

>

&6

$
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.)

A
A
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&
N
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N
6.&

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
06-03-2007 RAA
© by SEMIKRON