SKM200GB173D_06 Datasheet, PDF (2/6 Pages) Semikron International – IGBT Modules

SKM 200GB173D
SEMITRANS^® 3
IGBT Modules
SKM 200GB173D
SKM 200GB173D1
SKM 200GAL173D
SKM 200GAR173D
Characteristics
Symbol Conditions
Inverse Diode
( ⁷ 9*
&_{( } 7 /32 +@ _>9 7 2
(2
₍
&_==
I_
9_
=_{ :',}
FWD
( ⁷ 9*
&_{( } 7 /32 +
J 7 /222 +JC
>9 ^{7 '/3 @} ** ^{7 /122}
 
&_{( } 7 /32 +@ _>9 7 2
(2
₍
&_==
I_
9_
=_{ :'(,}
Module
&_{( } 7 /32 +
>9 ^{7 '/3 @} ** ^{7 /122}
 
._: 7 13 8*_{ 6}
._: 7 /13 8*_{ 6}
._: 7 /13 8*
._: 7 /13 8*
._: 7 /13 8*
._: 7 13 8*_{ 6}
._: 7 /13 8*_{ 6}
._: 7 /13 8*
._: 7 /13 8*
._: 7 /13 8*
min.
typ.
11
/F
/0
D3
<3
0<
1
/<
/0
03
//2
32
max. Units
14
/3
$1
G
+
C*
K
201 LJM
1D
/3
D3
+
C*
K
21/ LJM
Features
 ^{     }
 ^{      }
 ^{    }
 ^{!      }
     
 ^{    "! #}
   $ % &_{ }
 ^{' #}
 ^{( ) #   *+ }
 ^{&   "   }
,*- , *  -  
. !
 ^{   /0   }
    12 
Typical Applications
_*9
=_**NE99N
6  '
=_{ '}


 
   O $
._7 13 8*
._7 /13 8*
0
/3
12

203
G
23
G
220< LJM
3

013

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
 ^{+*       343 '}
432 _+*
 ^{,* "  432 ' /122} ,*
 ^{5"    %! !6}
 ^{   #   }
GB
GAL
GAR
2
15-09-2006 RAA
© by SEMIKRON