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SKM200GB12V Datasheet, PDF (2/5 Pages) Semikron International – SEMITRANS | |||
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SKM200GB12V
SEMITRANS® 3
SKM200GB12V
Features
⢠V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
⢠CAL4 = Soft switching 4. Generation
CAL-diode
⢠Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
⢠UL recognized, file no. E63532
⢠Increased power cycling capability
⢠With integrated gate resistor
⢠Low switching losses at high di/dt
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic welders
Remarks
⢠Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 200 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 5300 A/µs
VGE = ±15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
4.5
5.1
mï
6.3
6.8
mï
230
A
30
µC
13
mJ
0.26 K/W
15
20
nH
0.25
mï
0.5
mï
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GB
2
Rev. 4 â 23.03.2011
© by SEMIKRON
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