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SKM200GB125D_06 Datasheet, PDF (2/6 Pages) Semikron International – Ultra Fast IGBT Modules
SKM 200GB125D
SEMITRANS® 3
Ultra Fast IGBT Modules
SKM 200GB125D
SKM 200GAL125D
SKM 200GAR125D
Features
       
      
       
      
        
      
 ! "    #  $%   
           
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(  
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    )-. ,
Characteristics
Symbol Conditions
Inverse Diode
7! 4 73$
!  4 *5. %> 7<3 4 . 7
7!.
!
22;
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3
!  4 *5. %
M 4 55.. %MA
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Freewheeling Diode
7! 4 73$
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Module
$3
2$$OE33O
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 B    D
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;
;

   
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     ;
(8 4 -5 6$ #B
(8 4 *-5 6$ #B
(8 4 -5 6$
(8 4 *-5 6$
(8 4 -5 6$
(8 4 *-5 6$
(8 4 *-5 6$
(8 4 -5 6$ #B
(8 4 *-5 6$ #B
(8 4 -5 6$
(8 4 *-5 6$
(8 4 -5 6$
(8 4 *-5 6$
(8 4 *-5 6$
( 4 -5 6$
( 4 *-5 6$
min.
+
- 5
typ.
-
* :
* *

-+.
-C
-
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-C
*5
. +5
. 5
max. Units
- 5
7
7
* -
7
7
: F
G
G
%
A$
J
. -5 LMN
- 5
7
7
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7
7
: F
7
7
%
A$
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-.

G
G
. .+: LMN
5

5

+-5

Typical Applications
           
 / -. 01
 2     #     *.. 01
 #   
 3        / -. 01
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
04-05-2007 SEI
© by SEMIKRON